Mangetotransport properties of polycrystalline Fe₂MnSn thin films

If fully spin-based consumer electronics are ever to be realized, the separation and manipulation of electronic spin must be mastered. To this end, many exotic materials with novel electronic and magnetic properties have recently been theoretically modeled and experimentally studied, some of which show great potential applicability in sensing and memory. One promising set of such materials are Manganese-based Heusler compounds, which exhibit high spin polarization, low saturation magnetization, magnetic anisotropy, and high Curie temperatures Tc. In this work, magnetotransport properties of large-area magnetron sputtered thin films of polycrystalline hexagonal (D0₁₉) Fe₂MnSn and related Huesler-like Mn_3-xFe_xSn compounds are presented, including the longitudinal, transverse, and angular dependent room temperature magnetoresistance, as well as temperature dependent magnetization and Hall measurements. Our preliminary results deomonstrate a crossover effect from GMR-type behavior to AMR with increased bias voltage.