Effect of applying electric field on the absorption coefficient in GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As layered core-shell spherical quantum dots
POSTER
Abstract
Nowadays the study of semiconductor nanostructures has gained importance since they have a wide range of optoelectronic applications. Quantum dots, a branch of these systems, receive great attention due to their trend to emit in the terahertz region of the electromagnetic spectrum. This work presents the linear optical properties of a GaAs/AlxGa1-xAs layered core shell spherical quantum dot, particularly the intraband absorption coefficient changing as a function of intrinsic properties such as the width and aluminum concentration of the shells and we also consider the effect of applying an electric field as well as hydrostatic pressure. The electronic structure was calculated using the finite element method to solve the system’s Schrödinger equation. It was found that the main optical transition is between the 1s and 1p electronic states. The study shows that the absorption coefficient has different behaviors depending on the composition of the quantum dot and that it can be tuned by controlling external factors such as electric field and hydrostatic pressure.
Presenters
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Gabriel Rodriguez Guijarro
Autonomous University of Zacatecas
Authors
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Gabriel Rodriguez Guijarro
Autonomous University of Zacatecas
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Juan Carlos Martinez Orozco
Autonomous University of Zacatecas, Unidad Académica de Física, Universidad Autónoma de Zacatecas. Calzada Solidaridad esquina con Paseo La Bufa S/N. C.P. 98060, Zac., Zacatecas, México
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Karla Arely A Rodriguez Magdaleno
Autonomous University of Zacatecas, Unidad Académica de Física, Universidad Autónoma de Zacatecas. Calzada Solidaridad esquina con Paseo La Bufa S/N. C.P. 98060, Zac., Zacatecas, México, Universidad Autonoma de Zacatecas