Electronic transport on 2D nanodevices under strong electromagnetic field

The electronic transport on nanodevices are well described by Landauer-Büttiker approach. In these schema, we observe the quantization of conductance and his evolution depending on temperature where the electronic distribution function vary sensibly on the electron-phonon interactions.

When the nanodevices are submitted under intense electromagnetic field, the Floquet dressed states on the devices and contacts induced by the field must interplay an interesting role on transport phenomena.

Here, we develop an approach to observe the interaction of intense electromagnetic field on the electronic structure of nanodevices and contacts, non-perturbatively, using a tight-binding aproximation and Floquet-Fourier dressed states through a Green function solution of Schrödinger equation.

We apply this model to analyze the electronic transport on 2D heteroestructures made of graphene, molybdenum and tungsten dichalcogenides, observing the crossing and anticrossing of the dressed states on the electronic structure of these 2D devices.