Strain-dependent properties of Single-electron transistor based on Bi₂Se₃island.

Bi₂Se₃ is a well-known individual from the two-dimensional materials family for its topological insulator and thermoelectric properties, and because of this it has an enormous possibility in future nanoelectronics. Here, we have exhibited the activity and execution of a Bi₂Se₃ island Single-electron transistor (SET) by using first-principle calculation. Additionally, we expanded our work by applying both compressive and tensile strain and checking the effect on the performance of SET. For unstrained configuration, we obtained the electrostatic coupling parameter between the gate and the island (α) and the electrostatic polarisation contribution parameter (β) of the island towards the total energy to be 0.38037 and -0.05042 eV^-1 where the transport direction is along the ‘x’ direction. As we varied the strain the lowest value of α was obtained at 3% strain and β decreased as we increased the strain. The charge strength outline fluctuated by the strain applied and their effect can be deduced from line examines and normalized differential conductance.