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Charge-density-wave phase and magnetoresitance in Ag<sub>2-δ</sub>Te

ORAL · Invited

Abstract

Considerable excitement was generated by the observation of large and linear positive magnetoresistance (MR) in non-magnetic silver chalcogenides. Renewed interest in these materials was kindled by the discovery that Ag2Te in particular is a topological insulator with gapless linear Dirac-type surface states. High-pressure x-ray diffraction studies, combined with first-principles electronic structure calculations, have identified three phase transitions as the pressure is increased: an isostructural transition identified with an electronic topological transition followed by two structural phase transitions. These recent studies were carried out on nominally stoichiometric Ag2Te. For the present work we have prepared single-phase self-doped Ag2-δTe samples with a well-characterized silver deficit (δ = 2.0.10-4) for structural and electrical transport measurements over extended ranges of pressure (0-43 GPa), temperature (2-300 K) and magnetic field (0-9 T). The temperature dependence of the resistivity exhibits anomalous behavior at 2.3 GPa, slightly above the isostructural transition, which we postulate is due to Fermi surface reconstruction associated with a charge-density-wave (CDW) phase. The anomaly is enhanced by the application of a 9T magnetic field and shifted to higher temperature, implying that the electronic Zeeman energy is sufficient to alter the gapping of the Fermi surface. A peak in the pressure dependence of the resistivity and a sudden drop in the pressure dependence of the mobility, occurring at 2.3 GPa, provide additional evidence for a CDW phase at pressures slightly above the isostructural transition.

Publication: Y. Zhao, W. Yang, H. S. Schnyders, A. Husmann, G. Zhang, Y. Ren, D. L. Price, H.-K. Mao and M.-L. Saboungi, Phys. Rev. B 98, 205126 (2018)

Presenters

  • Marie-Louise Saboungi

    IMPMC, CNRS - Sorbonne University

Authors

  • Marie-Louise Saboungi

    IMPMC, CNRS - Sorbonne University

  • Yongsheng Zhao

    HPSTAR, Shanghai 201203, P. R. China

  • Wenge Yang

    HPSTAR, Shanghai 201203, P. R. China

  • Harold Schnyders

    Grand Valley State University, Allendale, Michigan 49401, USA

  • Anke Husmann

    University of Cambridge, Cambridge CB3 0FS, UK

  • Ganghua Zhang

    HPSTAR, Shanghai 201203, P. R. China

  • Yang Ren

    Argonne National Laboratory, IL 60439, USA

  • David L Price

    CNRS-University of Orleans, 45071 Orleans Cedex, France

  • Ho-Kwang Mao

    Carnegie Institution of Washington, Washington DC 20015, USA