Probing optoelectronic properties of graphene/black phosphorous/graphene heterostructures

The devices relying on heterostructures of various two-dimensional (2D) semiconductors have been proven to be potential candidates in many modern technologies. The recently emerged narrow gap 2D layered material named black phosphorous (BP) has demonstrated several intriguing optical and electronic properties. Analogous to other 2D materials, BP also features the tunable bandgap depending on layer number but differs in the band structure, i.e., it always has a direct band structure. The high carrier mobility and direct bandgap of BP make it a promising material to be exploited in broadband electromagnetic radiation (i.e., from visible to THz) sensing. However, the large contact resistance with metals limits its application as an efficient sensing device. Herein, we propose an optical (IR) sensor based on graphene/black phosphorous/graphene heterostructure where graphene act as a charge collection layer. Also, such kinds of heterostructures may pave the way to enhance the technological limits of novel sensing and imaging devices.