Thermoelectric properties and carrier dynamics in two-dimensional chalcogenides

In recent years, 2D layered metal chalcogenides and transition metal dichalcogenides (TMDs) have received tremendous attention due to their unique electronic, thermal and optoelectronic properties leading to their applications in optoelectronics and thermoelectrics (TE).[1,2] Understanding of electron and phonon scattering mechanisms and carrier dynamics is critical for optimization of the transport properties in new devices. TMDs like MoS₂, MoSe₂ and WS₂ are being investigated because of the electronic, optical and spin properties exhibited by them as they go from bulk to monolayer. The TE properties of few layers and monolayer TMDs are of great interest due to low thermal conductivity and increased power factor. In this context, we use the Boltzmann transport formalism to assess the potential of monolayer and bilayer TMDs and monolayer metal chalcogenide[3] as TE material by employing different electron and phonon scattering mechanisms. Carrier dynamics is also studied to understand the device efficiency.

References:

1. Q. H. Wang et al., Nat. Nanotechnol. 7,699(2012)

2. R. Gupta et al., J. Phys. Chem. C 124,17476(2020)

3. R. Gupta et al., J. Appl. Phys. 130,054301(2021)