Novel Two dimensional MA<sub>2</sub>N<sub>4</sub> (M=transition metal, A=Si, Ge) Materials for Renewable Energy Applications
ORAL
Abstract
In the present work, based on first-principles calculations we explored members of the recently proposed new two-dimensional MA2Z4 (M=Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W; A= Si, Ge) family and classified them for different applications. Furthermore, electronic structure accurate hybrid HSE functionals and detailed descriptor property calculation of these compounds scrutinize the best possible compounds. Among these materials, MoGe2N4 and HfSi2N4 exhibit a reasonably high optical absorption coefficient and optical transition strength from the valence band to conduction band confirm its suitability for solar harvesting applications. However, the two-dimensional nature of both MoGe2N4 and HfSi2N4 reveal strong excitonic effects, as confirmed by GW+BSE calculations. Thickness-dependent spectroscopic limited maximum efficiency of MoGe2N4 turns out to be around 15.40 %, thus proposing the possibility to be a potential candidate for photovoltaic application. On the other hand, a suitable band edge position with respect to CO2 reduction potential and effective CO2 activation on HfSi2N4 recommend it for photocatalytic CO2 reduction. Interestingly, NbSi2N4 exclusively exhibits a recently proposed bipolar magnetic character and enables its active use for spin transport-based applications.
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Publication: Novel Two-Dimensional MA2N4 Materials for Photovoltaic and Spintronic Applications<br>Asha Yadav, Jiban Kangsabanik, Nirpendra Singh, and Aftab Alam<br>The Journal of Physical Chemistry Letters 2021 12 (41), 10120-10127<br>DOI: 10.1021/acs.jpclett.1c02650
Presenters
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Asha S Yadav
Indian Institute of Technology Bombay
Authors
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Asha S Yadav
Indian Institute of Technology Bombay