Strain-induced magnetic planar Hall effect in antiferromagnetic Nd<sub>2</sub>Ir<sub>2</sub>O<sub>7</sub> thin film
ORAL
Abstract
In topological magnetic materials, external magnetic field, Hext, couples with intrinsic magnetic structures, leading to complex topological magnetic behavior such as anomlaous and quantized hall effect. While most of studies have been focuesed on ferromagnetic materials, the progress on antiferromagnetic (AFM) materials is just at the beginning. due to their robustness of external perturbation and vanishingly small magnetization. Recently, the torque-magnetometry study on AFM Eu2Ir2O7 suggests that applying Hext in-plane direction on Eu2Ir2O7 can produce nonlinear magnetization MꞱ, which is orthogonal to the Hext [1]. Theoretically, such MꞱ could originated from higher magnetic ordering, octuople [1]. However, the further epxereimental study of octupolar orthongonal magnetization, MꞱo, remains elusive. Here, we present the study of MꞱo in AFM fully-strained Nd2Ir2O7 thin film using various magneto-transport technique. Nd2Ir2O7 belongs to one of All-in-All-out (AIAO) antiferromagnetic pyrochlore irdate family. With the epitaxial strain, Nd2Ir2O7 becomes metallic and the AIAO ordering expereience spin canting. Such canted AIAO are knwon as the addition of three spin clusters (Dipole, A2-octupole and T1-octupole) [2]. The generation of two octuopolar ordering creates non-vanishing Berry curvature and induces anomalous Hall effect. Moreover, using in-plane rotational transport measurement, we found that the two octupoles can induce MꞱo and affect in-plane anomalous and planar Hall effect in Nd2Ir2O7 thin film. Our work highlights on the interplay of strain, topology, and magnetism in antiferromagnetic materials.
References
[1] T. Liang et al., Nat. Phys. 13 (2017) 599-603.
References
[1] T. Liang et al., Nat. Phys. 13 (2017) 599-603.
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Presenters
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Jeongkeun Song
Seoul Natl Univ
Authors
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Jeongkeun Song
Seoul Natl Univ
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Tae Won Noh
Seoul National University, Seoul Natl Univ