'Growth and Characterization of Pure and Doped Topological Material CoSi'

In CoSi, nontrivial topology and chirality give rise to intriguing physics, such as hosting Weyl fermions, and making it a potential candidate for displaying the quantized circular photogalvanic effect (CPGE). The CPGE is predicted to be quantized in terms of fundamental constants in Weyl-semimetals whose topological nodes lie at different energies, but has not been experimentally observed. But to experimentally realize this phenomena, the Fermi energy of CoSi must be tuned precisely. To this end, we report the growth and characterization of pure and electron doped CoSi. Ni and P substituted CoSi single crystals are synthesized via flux method and characterized by x-ray diffraction and energy dispersive x-ray spectroscopy (EDX). The Fermi surface and carrier mobility are assessed through quantum oscillations and Hall effect.