Band structure engineering of bilayer graphene by superlattice potential

Superlattice potential from periodic electric field may allow tunable band structure engineering in 2d materials, providing a new approach for creating novel low-energy electronic properties which may be difficult to achieve in conventional synthesis materials. In this project, we assemble hBN-encapsulated bilayer graphene devices on top of superlattice potential gate created by nanolithography defined antidot array on few-layer graphite. Our approach allows creating on-demand 2D superlattice potential with lattice constant down to ~40nm. We demonstrate modification of the band structure in bilayer graphene and potential emergence of partially flat bands which may facilitate the study of 2d correlated electrons.