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Detection of TLS defects coupled to a c-shunt flux qubit via critical-current fluctuations

ORAL

Abstract

Two-level-system (TLS) defects in superconducting qubits are one of the major noise mechanisms limiting qubit coherences. TLS defects are various atomic-scale defects of different microscopic nature which are mainly formed in amorphous layers such as the aluminum-oxide tunnel barrier of an Al/AlOx/Al Josephson junction. Conventionally, it is assumed that charge TLS defects are coupled to a superconducting qubit via charge fluctuations. However, TLS defects can also interact with a qubit through critical-current fluctuations, although such type of interaction has not been detected in experiments consistently.

In this work, we report the detection of critical-current-coupled TLS defects in a c-shunt flux qubit using a strong resonant qubit drive. The qubit is dynamically coupled to a critical-current-fluctuation TLS defect when the relation Ω=|ωTLS-2ωq| is met, where ωq is the qubit frequency, ωTLS is the defect frequency, and Ω is the Rabi frequency. For a charge-fluctuation TLS defect, the condition is different and given by Ω=|ωTLSq|. By measuring the qubit excited-state population as a function of an applied magnetic flux and qubit drive amplitude, we can distinguish between TLS defects with different types of qubit-defect interaction.

Publication: L. V. Abdurakhimov, I. Mahboob, H. Toida, K. Kakuyanagi, Y. Matsuzaki, S. Saito, in preparation.

Presenters

  • Leonid Abdurakhimov

    NTT Basic Research Laboratories, NTT Corporation

Authors

  • Leonid Abdurakhimov

    NTT Basic Research Laboratories, NTT Corporation

  • Imran Mahboob

    NTT Basic Research Laboratories, NTT Corporation

  • Hiraku Toida

    NTT Basic Research Laboratories, NTT Corporation

  • Kosuke Kakuyanagi

    NTT Basic Research Laboratories, NTT Corporation

  • Yuichiro Matsuzaki

    AIST, Research Center for Emerging Computing Technologies, National institute of Advanced Industrial Science and Technology (AIST), National Institute of Advanced Industrial Science and Technology

  • Shiro Saito

    NTT Basic Research Laboratories, NTT Corporation