Near-deterministic generation of defect-related emitters in GaSe Weijun Luo (Boston University); Alexander Puretzky (Oak Ridge National Laboratory); Qishuo Tan (Boston University); Zhuofa Chen (Boston University); Liangbo Liang (Oak Ridge National Laboratory); Xi Ling (Boston University);

Single-photon emission from atomic defects in two-dimensional (2D) van der Waals materials have recently shown the promising potential to serve the development of quantum information technology. We report the near-deterministic generation of defect-related quantum emitters (650 nm – 750 nm) in GaSe via localized strain engineering. We demonstrate the strain-dependent emission wavelengths and bandwidths via the photoluminescence mapping of individual pillars. We illustrate the emitters arising from defect-bound excitons via power-dependent photoluminescence measurements. Temperature-dependent measurements suggest that strain promotes the thermal quenching temperature of defect-related emitters from 120 K to 200 K. Our findings provide insights into the design of deterministic generation and control of defect-related GaSe emitters.