Imaging antiferromagnetic domain fluctuations and the effect of atomic-scale disorder in a doped spin-orbit Mott insulator
ORAL
Abstract
Correlated oxides can exhibit complex electronic and magnetic patterns. Understanding how magnetic domains form has been of great interest, but atomic-scale insight has been limited. We use spin-polarized scanning tunneling microscopy to image the evolution of spin-resolved modulations originating from antiferromagnetic (AF) ordering in a spin-orbit Mott insulator Sr3Ir2O7 as a function of chemical composition and temperature. We find that replacing only several percent of La for Sr leads to nanometer-scale AF puddles clustering away from La substitutions preferentially located in the middle SrO layer. Thermal erasure and re-entry into the low-temperature ground state leads to a spatial reorganization of the AF puddles. Our experiments reveal multiple stable AF domain configurations at low temperature, and shed light onto spatial fluctuations of the AF order around atomic-scale disorder in electron doped Sr3Ir2O7.
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Presenters
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Ilija Zeljkovic
Boston College
Authors
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Ilija Zeljkovic
Boston College
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He Zhao
Boston College
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Zachary Porter
University of California, Santa Barbara
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Xiang Chen
Lawrence Berkeley National Laboratory
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Stephen D Wilson
University of California, Santa Barbara
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Ziqiang Wang
Boston College