APS Logo

Nanofabrication and transport studies of Quasi-one-dimensional Topological Insulators

ORAL

Abstract

Quasi-one-dimensional (1D) topological insulators (TIs) promise advantages over their three-dimensional (3D) and quasi-two-dimensional (2D) counterparts, such as multiple cleavage planes, strain-induced phase transitions between weak TI, strong TI, and trivial insulator, and hosting of prototype higher-order TIs with helical hinge modes. Prototypical examples of quasi-1D TIs are Bi4I4 and Bi4Br4, which are composed of a periodic stack of atomic chains aligned to the b direction. Utilizing nanofabrication techniques, we are able to exfoliate and fabricate thin layer of field-effect transistors based on these materials and observe their transport behavior at high magnetic field and low temperature.  

–

Publication: Y. Liu, R. Chen, Z. Zhang, M. Bockrath, C. N. Lau, Y.-F. Zhou, C. Yoon, S. Li, X. Liu, N. Dhale, <br>B. Lv, F. Zhang, K. Watanabe, T. Taniguchi, J. Huang, M. Yi, J. S. Oh, and R. J. Birgeneau, <br>Gate-Tunable Transport and Unconventional Band Topology in Quasi-One-Dimensional <br>a-Bi4I4 Field Effect Transistors, preprint, submitted (2021)

Presenters

  • Zheneng Zhang

    the Ohio State University

Authors

  • Zheneng Zhang

    the Ohio State University

  • Yulu Liu

    Ohio State Univ - Columbus

  • Ruoyu Chen

    Ohio State Univ - Columbus

  • Marc Bockrath

    Ohio State University

  • Chun Ning Lau

    Ohio State Univ - Columbus, The Ohio State University

  • Yanfeng Zhou

    University of Texas at Dallas

  • Chiho Yoon

    Seoul Natl Univ

  • Sheng Li

    University of Texas at Dallas

  • Xiaoyuan Liu

    University of Texas at Dallas

  • Bing Lv

    University of Texas at Dallas

  • Fan Zhang

    University of Texas at Dallas

  • Nikhil Dhale

    University of Texas at Dallas