The Effect of Ge-doping on Electronic and Lattice Vibrational Properties of FeGa<sub>3</sub>
ORAL
Abstract
Studied initially for its large thermopower effect, the intermetallic semiconductor FeGa3 has recently been shown to provide a suitable platform for studying electron correlations, such as metal-insulator transition, non Fermi liquid behavior and ferromagnetism. In particular, with Ge-doping at Ga site the ground state is tuned from a Kondo insulator to a paramagnetic and further to a ferromagnetic metal. Here we present optical reflectance measurements on single crystals of FeGa3-xGex, for different values of x. The temperature was varied between 300 K and 5 K, and the frequency ranged from 40 cm-1 to 50 000 cm-1. Involving the Kramers-Kronig transformation, we obtained various optical functions and discuss the electronic and lattice vibrational properties of different ground states resulting from Ge substitution.
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Presenters
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Tenzin K Sherpa
Ramapo College of NJ, Mahwah NJ, 07430
Authors
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Tenzin K Sherpa
Ramapo College of NJ, Mahwah NJ, 07430
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Prithivi Rana
Ramapo College of NJ, Mahwah NJ, 07430
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Aashish Poudel
Ramapo College of NJ, Mahwah NJ, 07430
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Rodica M Martin
Montclair State University
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Ihor Sydoryk
Ramapo College of NJ, Mahwah NJ, 07430
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Weijun Ren
Research Center of Topological Functional Materials and Henan Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng 475004, China
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Cedomir Petrovic
Brookhaven National Laboratory
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Catalin Martin
Ramapo College