First-Principles Investigation of Disorder in an Antiferromagnetic Topological Insulator
ORAL
Abstract
Topological insulators host protected edge and surface states due to the topology of the bulk band structure, and because of this are considered robust to disorder. They have great potential for improving the function and energy efficiency of applications ranging from microelectronics to quantum computing. The classification of topological materials has strongly been influenced by the presence of crystalline symmetries, however recent work suggests that both disordered and amorphous materials can host topological phases. Using first-principles calculations and model Hamiltonians we explore the effects of systematically breaking crystal symmetries on the magnetic, electronic, and topological structure of the antiferromagnetic topological insulator (AFTI) MnBi2Te4. Finally, we will discuss how disorder can be used to tune different phases in magnetic topological materials, with a focus on AFTIs.
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Presenters
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Amoolya Grandhi
Lawrence Berkeley National Laboratory (LBNL, LBL)
Authors
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Amoolya Grandhi
Lawrence Berkeley National Laboratory (LBNL, LBL)