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Electronic structure and magnetism in MnBi<sub>2</sub>Te<sub>4</sub>: a diffusion Monte Carlo and DFT Study

ORAL

Abstract

The layered vdW MnBi2Te4 (MBT) material has attracted substantial attention recently due to claims that it is the first observed Z2 AFM topological insulator. Experimental measurements show that MBT has A-type AFM magnetic structure with intralayer FM order and interlayer AFM order. Some magnetic and electronic properties, however, remain unclear, for instance, measured local magnetic moments on the Mn site are widely scattered (4-6 μB) and calculated DFT band gaps are sensitive to model parameters and therefore require tuning to experiment. In this work, we use the benchmarking fixed-node diffusion Monte Carlo (FNDMC) method to shed light on these properties. By integrating angular averages of the FNDMC spin-densities at the Mn sites with optimized nodes, we provide predictive insights into the local moment. Additionally, we exploit the variational property of FNDMC to parameterize DFT models that require no experimental inputs to estimate an ab initio band gap that agrees with measured values for this topological material.

Presenters

  • Jaron T Krogel

    Oak Ridge National Lab

Authors

  • Michael C Bennett

    Material Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge National Lab

  • Panchapakesan Ganesh

    Oak Ridge National Lab

  • Anh Pham

    Oak Ridge National Lab, Lawrence Livermore National Lab

  • Jaron T Krogel

    Oak Ridge National Lab

  • Guangming Wang

    North Carolina State University