Patterned Regrowth of Coherent Lateral Heterojunctions in Transition Metal Dichalcogenides

Patterning electronic properties within a single crystalline material provides a foundation for modern information technology. Similar capabilities can be realized in atomically thin two-dimensional (2D) crystals by forming lateral heterostructures with coherent, defect-free, lattice connections. In this talk, I will discuss how one can produce such 2D films with spatially designable coherent heterointerfaces based on multiple transition metal dichalcogenide (TMD) monolayers. For this, we combine three advanced techniques into an integrated procedure: patterned regrowth, resist-free patterning, and precisely controlled metalorganic chemical vapor deposition. The resulting structures are then characterized by Raman and TEM, which demonstrated lateral epitaxy at the patterned boundaries. I will also present the results of electrical transport measurements from these junctions. Our approach could lead to the generation of high-performance electronic and optoelectronic devices in the atomically thin limit.