Large-gap insulating dimer ground state in monolayer IrTe<sub>2</sub>
ORAL
Abstract
Monolayer (ML) of two-dimensional van der Waals (vdW) materials exhibit novel electronic phases distinct from their bulk due to the absence of interlayer coupling and the resulting electronic structure and symmetry changes. Here, by a combined study of angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy, we report the emergence of unique 2 x 1 insulating Ir dimerized ground state in monolayer IrTe2 with a larger than 1 eV band gap, which is distinct from the metallic bilayer (BL) and bulk. First-principle calculations reveal that the strong Te-Te interlayer coupling plays a vital role in IrTe2 layer resulting in the large-gap metal-to-insulator transition, when the thickness changes from BL to ML, by strongly affecting the charge and phonon properties. Our findings provide compelling case of an emergent novel ground state caused by the strong interlayer coupling in vdW layered materials and its absence in the monolayer.
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Presenters
Jinwoong Hwang
Lawrence Berkeley National Laboratory
Authors
Jinwoong Hwang
Lawrence Berkeley National Laboratory
Canxun Zhang
University of California, Berkeley
Kyoo Kim
Korea Atomic Energy Research Institute, Korea Atomic Energy Research Institute (KAERI), Daejeon, Korea
Tiancong Zhu
University of California, Berkeley
Sooran Kim
Kyungpook Natl Univ
Bongjae Kim
Kunsan National University
YONG ZHONG
Lawrence Berkeley National Laboratory, Stanford University
Mohamed Salah
Suez University
Charlotte Herbig
University of California, Berkeley
Choongyu Hwang
Pusan Natl Univ
Zhixun Shen
Stanford University, Geballe Laboratory for Advanced Materials, Stanford University, USA, Stanford Univ
