Controlling the electronic and magnetic properties by Sn substitution in SrRuO<sub>3</sub> epitaxial films
ORAL
Abstract
Controlling the lattice strain in films through chemical substitution has been widely investigated in strongly correlated electronic systems as a means to change electronic and magnetic properties from those of the bulk. Here we present a systematic study on epitaxial SrRu1−xSnxO3 (0 ≤ x ≤ 1) thin films grown by pulsed laser deposition to achieve stable phases in this family of quaternary perovskites, which has been unstable in bulk. We find a gradual expansion of the c-axis lattice parameter with Sn doping, serving as a means to tune chemical pressure and magnetism. This talk will focus on the electronic, magnetic, and magnetotransport properties by the effects of Sn doping in SrRuO3 thin films.
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Publication: A. Huon et al., Appl. Phys. Lett. 119, 112404 (2021).
Presenters
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Amanda Huon
Oak Ridge National Laboratory, University of the Sciences, University of the Sciences in Philadelphia
Authors
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Amanda Huon
Oak Ridge National Laboratory, University of the Sciences, University of the Sciences in Philadelphia
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Sangmoon Yoon
Oak Ridge National Laboratory
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Michael Fitzsimmons
University of Tennessee
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Jong Mok Ok
Oak Ridge National Lab, Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
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Timothy R Charlton
Oak Ridge National Lab
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Clarina R Dela Cruz
Oak Ridge National Lab
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Ho Nyung Lee
Oak Ridge National Lab