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Controlling the electronic and magnetic properties by Sn substitution in SrRuO<sub>3</sub> epitaxial films

ORAL

Abstract

Controlling the lattice strain in films through chemical substitution has been widely investigated in strongly correlated electronic systems as a means to change electronic and magnetic properties from those of the bulk. Here we present a systematic study on epitaxial SrRu1−xSnxO3 (0 ≤ x ≤ 1) thin films grown by pulsed laser deposition to achieve stable phases in this family of quaternary perovskites, which has been unstable in bulk. We find a gradual expansion of the c-axis lattice parameter with Sn doping, serving as a means to tune chemical pressure and magnetism. This talk will focus on the electronic, magnetic, and magnetotransport properties by the effects of Sn doping in SrRuO3 thin films.

Publication: A. Huon et al., Appl. Phys. Lett. 119, 112404 (2021).

Presenters

  • Amanda Huon

    Oak Ridge National Laboratory, University of the Sciences, University of the Sciences in Philadelphia

Authors

  • Amanda Huon

    Oak Ridge National Laboratory, University of the Sciences, University of the Sciences in Philadelphia

  • Sangmoon Yoon

    Oak Ridge National Laboratory

  • Michael Fitzsimmons

    University of Tennessee

  • Jong Mok Ok

    Oak Ridge National Lab, Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea

  • Timothy R Charlton

    Oak Ridge National Lab

  • Clarina R Dela Cruz

    Oak Ridge National Lab

  • Ho Nyung Lee

    Oak Ridge National Lab