Phonon-assisted luminescence in qubits from many-body perturbation theory
ORAL
Abstract
Phonon-assisted luminescence is a key property of defect centers in semiconductors, and can be measured to perform the readout of the information stored in a quantum bit, or to detect temperature variations. The investigation of phonon-assisted luminescence usually employs phenomenological models, such as that of Huang and Rhys, with restrictive assumptions that can fail to be predictive. In this work, we predict luminescence and study exciton-phonon couplings within a rigorous many-body perturbation theory framework, an analyisis that has never beenperformed for defect centers. In particular, we study the optical emission of the negatively-charged boron vacancy in 2D hexagonal boron nitride, which currently stands out among defect centers in 2D materials thanks to its promise for applications in quantum information and quantum sensing. We show that phonons are responsible for the observed luminescence, which otherwise would bedark due to symmetry. We also show that the symmetry breaking induced by the static Jahn-Teller effect is not able to describe the presence of the experimentally observed peak at 1.5 eV.
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Presenters
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Francesco Libbi
Ecole Polytechnique Federale de Lausanne
Authors
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Francesco Libbi
Ecole Polytechnique Federale de Lausanne
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Pedro M Melo
Univ of Utrecht
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Zeila Zanolli
Forschungszentrum Jülich GmbH
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Matthieu J Verstraete
University of Liege
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Nicola Marzari
Ecole Polytechnique Federale de Lausanne, Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne