High Throughput Cryogenic Characterization of Industry Fabricated Silicon Based Qubit Devices

Intel fabricates silicon-based quantum computing devices in the same advanced 300mm fab where its next generation process technology is developed. While the creation of a research line for quantum computing allows us to generate a huge number of wafer experiments with 10,000s of devices on each wafer, unlike high-volume CMOS research and development, there exists no corresponding high throughput electrical testing ecosystem for quantum computing. The volume of devices, both quantum dot arrays for qubit formation and ancillary devices for process monitoring and device physics characterization, coupled with the increased complexity of CMOS processing schemes, requires innovation in high throughput cryogenic characterization equipment and techniques. This has led to the development of a first of a kind cryogenic wafer prober capable of device characterization at 1K to enable rapid and statistically significant data collection of both traditional transistor and quantum dot metrics. Here we demonstrate the utility of these high throughput characterization techniques at 1K for fabrication process optimization and yield improvement in addition to optimal device selection for spin qubit formation in our dilution refrigerators at 20mK.