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The sp<sup>2</sup>/sp<sup>3</sup> bonding features of Fullerene-based Resistive Random Access Memory

ORAL

Abstract

The carbon-based materials, such as carbon nanotubes (CNTs), graphene, amorphous carbon (a-C) etc., have been addressed to the potential candidates for resistive random access memory(RRAM) devices. In this work, we studied the fullerene-based RRAMs with a simple structure of Au(50nm) / C84 /Si (111). Ultrathin film of fullerene molecules (C84) in our RRAM devices served as an insulating layer while Au(50nm) and high-doped Si(111) substrate worked as top and down electrodes.

The material characteristics, opto-electronic properties, ferromagnetic magnetism and the binding features of the fullerene-based RRAMs were performed with MFM, Raman, XPS, and PL. The formation and rupture of sp2/sp3 bonding switching between carbon atoms attributed to conductive filaments in RRAMs could be further investigated from various SPMs.  The resistive switching mechanism in our proposed fullerene-based RRAM is discussed.

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Publication: [1] Y. Chai, Y. Wu, K. Takei, H. Y. Chen, S. M. Yu, P. C. H. Chan, A. Javey, and H. S. P. Wong, Ieee Transactions on Electron Devices 58, 3933 (2011).<br>[2] K. Shi, Z. Wang, H. Xu, Z. Xu, X. Zhang, X. Zhao, W. Liu, G. Yang, and Y. Liu, IEEE Electron Device Letters 39, 488 (2018).<br>[3] M.-D. Yi, J.-L. Guo, B. Hu, X.-H. Xia, Q.-L. Fan, L.-H. Xie, and W. Huang, Chinese Physics Letters 32, 077201 (2015).<br>[4] F. Hui, E. Grustan-Gutierrez, S. B. Long, Q. Liu, A. K. Ott, A. C. Ferrari, and M. Lanza, Advanced Electronic Materials 3, 1600195 (2017).<br>[5] J. Schwan, S. Ulrich, V. Batori, H. Ehrhardt, and S. R. P. Silva, Journal of Applied Physics 80, 440 (1996).<br>[6] K. Haubner, J. Murawski, P. Olk, L. M. Eng, C. Ziegler, B. Adolphi, and E. Jaehne, Chemphyschem 11, 2131 (2010).

Presenters

  • Pei-Fang Chung

    Department of Physics, National Chung Hsing University

Authors

  • Pei-Fang Chung

    Department of Physics, National Chung Hsing University

  • Mon-Shu Ho

    Department of Physics, National Chung Hsing University, Department of Physics & Institute of Nanoscience, National Chung Hsing University