Transition Metal Dichacogenides Film Growth using Metal Film Assisted Chemical Vapor Deposition

Atomically thin Transition metal dichacogenides (TMDCs) are potentially capable of miniaturizing optoelectronic devices to an atomic scale. However, this depends on the high-quality large area synthesis of materials. To address this need, we introduce metal film assisted chemical vapor deposition (MFACVD) for the wafer scale growth of TMDs. Recently, a successful wafer scale synthesis of high optical quality monolayer and few layer MoS₂ has been performed using this method and it shows the capability of synthesizing other TMDCs. Mainly we work on a new field of group IV TMDCs that have gained a considerable attention due to the prediction of excellent electronic properties. ZrSe₂ and HfSe₂ considered to have high in plane conductivity and higher mobility in MX₂ group and believed to be among the best candidates to replace Silicon in nano electronics due to its predicted band gap in the visible infrared region. Even though a considerable study has been done for the growth of bulk ZrSe₂ crystals, less study has been done for the large-scale synthesis of these films. In our method we deposit Zr films with different thickness on SiO₂ substrate and study the growth response using two different Se sources (Se powder and ZrSe₂ powders).