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Voltage-control of effective damping in spin Hall nano-oscillators

ORAL

Abstract

Constriction-based spin Hall nano-oscillators (SHNOs) [1] have attracted interest for their non-linear behavior [2] exhibiting ultra-wide microwave frequency tunability [3], mutual synchronization in chains [4] and 2D arrays [5], and voltage enabled frequency manipulation [6]. The latter provides an efficient path for the implementation of neuromorphic and quantum-like computing applications, such as Ising Machines [7]. In this work, we use micromagnetic simulations to explore voltage gate geometries for controlling SHNOs and obtain strong qualitative and quantitative changes in effective damping as a function of gate placement. We speculate that these effects are due to spin-wave localization and reflection at the voltage gate interfaces and the product of a change in magnetic anisotropy as a result of the applied electric field.

[1] T. Chen et al. Proc. IEEE,104(10):1919–1945, Oct 2016.

[2] M. Dvornik et al. Physical Review Applied,9(1):014017, Jan 2018.

[3] M. Zahedinejad et al. Applied Physics Letters, 112(13):132404, 2018.

[4] A. A. Awad et al. Nat. Phys., 13(Nov):292–299, 2017.1

[5] M. Zahedinejad et al. Nat. Nanotechnol. 15(1):47–52, Jan 2020.

[6] H. Fulara et al. Nature Communications, 11(1):1–7, Dec 2020.

[7] A. Houshang et al. arXiv:2006.02236. 2020

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Presenters

  • Victor H Gonzalez

    University of Gothenburg

Authors

  • Victor H Gonzalez

    University of Gothenburg

  • Roman Khymyn

    University of Gothenburg, Sweden, University of Gothenburg, Physics Department, University of Gothenburg, Physics Department, University of Gothenburg, 412 96 Gothenburg, Sweden

  • Himanshu Fulara

    Indian Institute of Technology Roorkee, 1Physics Department, University of Gothenburg, 41296 Gothenburg, Sweden. 2Department of Physics, Indian Institute of Technology Roorkee, Roorkee 247667, India, Indian Institute of Technology Roorkee, India, Physics Department, University of Gothenburg

  • Johan Åkerman

    Goteborg Univ, University of Gothenburg, 1Physics Department, University of Gothenburg, 41296 Gothenburg, Sweden., University of Gothenburg, Sweden, Physics Department, University of Gothenburg, Physics Department, University of Gothenburg, 412 96 Gothenburg, Sweden

  • Afshin Houshang

    University of Gothenburg, 1Physics Department, University of Gothenburg, 41296 Gothenburg, Sweden., Physics Department, University of Gothenburg