Semiconductor Qubits V
FOCUS · K39 · ID: 47117
Presentations
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Phase correction code on spin qubits
ORAL · Invited
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Publication: -
Presenters
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Floor Van Riggelen
Delft University of Technology
Authors
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Floor Van Riggelen
Delft University of Technology
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Exchange gate between hole spin qubits with Rashba spin-orbit coupling
ORAL
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Presenters
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Yun-Pil Shim
University of Texas at El Paso
Authors
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Yun-Pil Shim
University of Texas at El Paso
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Omadillo Abdurazakov
University of Texas at El Paso
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Charles Tahan
Laboratory for Physical Sciences
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A single hole spin with enhanced coherence in natural silicon
ORAL
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Presenters
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Nicolas Piot
CEA grenoble, CEA Grenoble
Authors
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Nicolas Piot
CEA grenoble, CEA Grenoble
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Boris Brun-Barriere
CEA grenoble, CEA Grenoble
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Vivien Schmitt
CEA grenoble, CEA Grenoble, University of New South Wales
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Simon Zihlmann
Univ. Grenoble Alpes, Grenoble INP, CEA, IRIG-PHELIQS, Grenoble F-38000, France, CEA Grenoble, CEA grenoble
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Vincent Michal
CEA Grenoble, CEA grenoble
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Yann-Michel Niquet
CEA Grenoble, CEA grenoble
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Agostino Apra
CEA Grenoble, CEA grenoble
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Xavier Jehl
CEA Grenoble, CEA grenoble
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Benoit Bertrand
CEA, LETI, Minatec Campus, Grenoble F-38000, France, CEA-Leti, CEA Grenoble, Univ. Grenoble Alpes, CEA, Leti, CEA, LETI, Grenoble, France, CEA grenoble
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Tristan Meunier
Institute Neel, Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France, Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
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Maud Vinet
CEA-Leti
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Romain Maurand
Univ. Grenoble Alpes, Grenoble INP, CEA, IRIG-PHELIQS, Grenoble F-38000, France, CEA Grenoble, CEA, INAC-PHELIQS, Grenoble, France, Univ. Grenoble Alpes, CEA, IRIG, CEA grenoble
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Silvano De Franceschi
CEA Grenoble, Univ. Grenoble Alpes, CEA, IRIG, CEA, INAC-PHELIQS, Grenoble, France, CEA grenoble
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Electric-dipole spin resonance for light-holes in germanium quantum well
ORAL
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Presenters
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Patrick Del Vecchio
École Polytechnique de Montréal
Authors
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Patrick Del Vecchio
École Polytechnique de Montréal
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Oussama Moutanabbir
Ecole Polytechnique de Montreal, École Polytechnique de Montréal, Department of Engineering Physics, École Polytechnique de Montréal
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Anisotropy of hole spin qubits in a silicon fin field-effect transistor
ORAL
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Publication: Geyer et al., Self-aligned gates for scalable silicon quantum computing, Appl. Phys. Lett. 118, 104004 (2021)<br>Camenzind et al., A spin qubit in a fin field-effect transistor, arXiv:2103.07369 (2021)<br>Geyer et. al, Anisotropy of hole spin qubits in a silicon fin field-effect transistor, manuscript in preparation
Presenters
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Simon Geyer
University of Basel
Authors
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Simon Geyer
University of Basel
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Leon Camenzind
University of Basel
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Andreas Fuhrer
IBM Research - Zurich
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Richard J Warburton
University of Basel
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Dominik M Zumbuhl
University of Basel
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Andreas V Kuhlmann
University of Basel
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Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
ORAL
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Presenters
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Ikkyeong Jin
University of New South Wales
Authors
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Ikkyeong Jin
University of New South Wales
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Scott D Liles
University of New South Wales
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Krittika Kumar
University of New South Wales
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Matthew J Rendell
University of New South Wales
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Christopher Escott
University of New South Wales
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Fay E Hudson
University of New South Wales, Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Sydney, New South Wales 2052, Australia.
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Wee Han Lim
University of New South Wales
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Andrew S Dzurak
University of New South Wales, Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Sydney, New South Wales 2052, Australia.
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Alex R Hamilton
University of New South Wales
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Quantum Coherence in Germanium Hole Spin Qubits
ORAL
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Presenters
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William Iain L Lawrie
Delft University of Technology
Authors
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William Iain L Lawrie
Delft University of Technology
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Nico W Hendrickx
Delft University of Technology, IBM Quantum, IBM Research, Zurich
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Floor Van Riggelen
Delft University of Technology
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Maximilian Russ
Delft University of Technology
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David Linteau
EPFL Lausanne, Switzerland
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Pericles Philippopoulos
McGill University
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Sander L de Snoo
Delft University of Technology
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Amir Sammak
Netherlands Organization for Applied Scientific Research (TNO), TNO, Delft, The Netherlands, Delft University of Technology
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Giordano Scappucci
Delft University of Technology, QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, The Netherlands, QuTech and Kavli Institute of Nanoscience, Delft University of Technology
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Bill A Coish
McGill Univ, McGill University
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Menno Veldhorst
Delft University of Technology
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Electrical control of the g-tensor of the first holein a silicon MOS quantum dot
ORAL
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Publication: https://arxiv.org/abs/2012.04985
Presenters
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Scott D Liles
University of New South Wales
Authors
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Scott D Liles
University of New South Wales
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Frederico Martins
University of New South Wales
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Dmitry Miserev
University of Basel
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Andrey A Kiselev
HRL Laboratories, LLC
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Ian Thorvaldson
University of New South Wales, Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
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Matthew J Rendell
University of New South Wales
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Ikkyeong Jin
University of New South Wales
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Fay E Hudson
University of New South Wales, Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Sydney, New South Wales 2052, Australia.
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Menno Veldhorst
Delft University of Technology
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Kohei M Itoh
Keio Univ, School of Fundamental Science and Technology, Keio University, Kohoku-ku, Yokohama, Japan., Keio University
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Oleg P Sushkov
University of New South Wales
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Thaddeus D Ladd
HRL Laboratories, LLC, HRL Laboratories
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Andrew S Dzurak
University of New South Wales, Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, UNSW Sydney, New South Wales 2052, Australia.
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Alex R Hamilton
University of New South Wales
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Towards hole-spin qubits in Si pMOSFETs within a planar CMOS foundry technology
ORAL
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Publication: Physical Review Applied (in press) and arXiv:2106.04940.
Presenters
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Filippo Troiani
CNR - Istituto Nanoscienze, Modena, Italy, University of Modena & Reggio Emilia
Authors
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Filippo Troiani
CNR - Istituto Nanoscienze, Modena, Italy, University of Modena & Reggio Emilia
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Laura Bellentani
CNR - Istituto Nanoscienze, Modena, Italy
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Andrea Secchi
CNR - Istituto Nanoscienze, Modena, Italy
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Andrea Bertoni
CNR - Istituto Nanoscienze, Modena, Italy
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Matteo Bina
Applied Materials, Reggio Emilia, Italy
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Andrea Padovani
Applied Materials, Reggio Emilia, Italy
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Luca Larcher
Applied Materials, Reggio Emilia, Italy
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Shai Bonen
University of Toronto, Toronto, Canada
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Sorin Voinigescu
University of Toronto, Toronto, Canada
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All-electrical control of hole singlet-triplet spin qubits at low leakage points
ORAL
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Publication: arXiv: 2107.12622 (2021)
Presenters
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Philipp M Mutter
University of Konstanz
Authors
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Philipp M Mutter
University of Konstanz
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Guido Burkard
Univ Konstanz, University of Konstanz, Konstanz
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Electron and Hole Spin Qubits Variability in Si MOS Devices
ORAL
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Publication: arXiv:2107.10902
Presenters
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Biel Martinez Diaz
CEA Grenoble
Authors
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Biel Martinez Diaz
CEA Grenoble
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Yann-Michel Niquet
CEA Grenoble, CEA grenoble
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Hole spin qubits in Si and Ge quantum dots: Ultrafastgates and noise resilient qubits
ORAL
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Publication: [1] S. Bosco, M. Benito, C. Adelsberger and D. Loss, Phys. Rev. B 104,115425 (2021).<br>[2] S. Bosco, B. Hetényi and D. Loss, PRX Quantum 2, 010348 (2021).<br>[3] S. Bosco and D. Loss, Phys. Rev. Lett. in press, arXiv:2106.13744 (2021)
Presenters
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Stefano Bosco
University of Basel
Authors
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Stefano Bosco
University of Basel
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Daniel Loss
University of Basel
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