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High mobility subbands at a correlated oxide interface

ORAL

Abstract

The 3d orbitals at the LaAlO3/SrTiO3 (LAO/STO) interface host a manifold of correlated phenomena including electron pairing without superconductivity. These electrons are postulated to reside in multiple quantum wells close to the interface, however, the defect structure at the interface often hampers clean transport study at the strong coupling regime in the low-density limit. Here by tailoring the interface design rule, we report an observation of highly mobile subbands at the LAO/STO interface with low field mobility exceeding 30,000 cm2/Vs. Ultra-low field aperiodic quantum oscillations (0-2 T) are present, and a doubling of the oscillation frequency is observed upon back gating. Our results suggest the observed subbands may reside in quasi-1D ferroelastic domain boundaries which host exeptionally light electrons and pairs.

Presenters

  • Mengke Ha

    University of Science and Technology of China

Authors

  • Mengke Ha

    University of Science and Technology of China

  • Zhiyuan Qin

    University of Science and Technology of China

  • Dawei Qiu

    University of Science and Technology of China, University of Science and Technology of

  • Qing Xiao

    University of Science and Technology of China

  • Changjian Ma

    University of Science and Technology of China

  • Danqing Liu

    University of Science and Technology of China

  • Guanglei Cheng

    University of Science and Technology of