Insulator-Metal Transition in Two-dimensional Mott Insulator NiPS<sub>3</sub> under pressure
ORAL
Abstract
NiPS3 crystallizes in a monoclinic C2/m structure at ambient pressure. The Ni ions form a honeycomb lattice, and each layer is isolated between two layers of S and P triangles (PS3), separated by van der Waals (vdW) gaps. Below 155 K, NiPS3 orders anti-ferromagnetically with the magnetic moment directed mostly along the c axis.1 There is a prediction that pressure-induced Mott insulator to metal transition (IMT) might be accompanied by the |SZ| = 1 to |SZ| = 1/2 state without changing crystal structure.2 The electronically-driven IMT suggests that NiPS3 is a promising material for ultrafast resistivity switching. We performed electrical resistance and XRD measurements under quasi-uniaxial pressure and observed a sluggish IMT at 35 GPa accompanied by a structure change. This work did not observe superconductivity down to 2 K in contrast to FePSe3 (max Tc ~ 5.5 K at 30 GPa)4. The observed structure evolution differs from earlier reports that applied a different pressure media.3 It is suggested that the phase stability fields of NiPS3 are highly dependent on the stress state.
[1] Wildes et al., Phys. Rev. B 92, 224408 (2015).
[2] H.S. Kim et al., Phys. Rev. Lett. 123, 236401 (2019).
[3] X. Ma et al., Sci. China Physics, Mech. Astron. 64, 297011 (2021).
[4] Y. Wang et al. Nature Communications 9, 1914 (2018)
[1] Wildes et al., Phys. Rev. B 92, 224408 (2015).
[2] H.S. Kim et al., Phys. Rev. Lett. 123, 236401 (2019).
[3] X. Ma et al., Sci. China Physics, Mech. Astron. 64, 297011 (2021).
[4] Y. Wang et al. Nature Communications 9, 1914 (2018)
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Publication: T. Matsuoka et al., 'Pressure-Induced Insulator-Metal Transition in Two-Dimensional Mott Insulator NiPS3' (Accepted to Journal of Physical Society of Japan)
Presenters
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Takahiro Matsuoka
University of Tennessee
Authors
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Takahiro Matsuoka
University of Tennessee
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Rui Xue
University of Tennessee
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Amanda V Haglund
University of Tennesseea, University of Tennessee, Department of Materials Science and Engineering, The University of Tennessee
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Jesse S Smith
Argonne National Laboratory
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Maik Lang
University of Tennessee
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Antonio M dos Santos
Oak Ridge National Lab
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David G Mandrus
University of Tennessee, Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, 37916, USA