Electric-dipole induced nuclear electrical resonance in a phosphorus donor in silicon

The nuclear spin of phosphorus atom in silicon is considered as a good information carrier for solid-state qubits because of its good coherence. The coherent control of nuclear spin is generally done using a nuclear magnetic resonance (NMR) that has slow Rabi frequency. Here, we theoretically propose that with the help of hyperfine interactions and magnetic field gradients, we can achieve fast electric-dipole induced nuclear electrical resonance (EDNER) through a Raman-like process. The hybridization of electrons, nuclear and charge in this scheme leads to stronger dipole transitions compared with NMR. By choosing specific manipulation points, the nuclear spin resonance frequency is less sensitive to electrical noise, resulting in longer coherence time and high-fidelity quantum gate operation. Fast electrical control of donor nuclear spin qubit in silicon may have potential applications in silicon-based quantum computing.