Acceptor qubit in silicon with tunable strain

Spin qubits in semiconductor are a potential platform for quantum computers. Hole spin qubit is widely studied recently. However, hole spin of acceptor dopant atom is less discussed compared with that in quantum dot. Here, we introduce model and all-electrical manipulation of boron acceptor spin qubit near Si interface with tunable strain. In our model, strain plays an important role. After utilization of strain, there will be two sweet spots, where decoherence from electrical noise is weak. And the two sweet spots are getting closer with higher asymmetric strain. They may form a 'sweet region' having strong immunity to electrical noise with proper condition. And interaction with stain can mix different hole and spin states, which can realize manipulation of spin qubit. Moreover, Strain can tune the splitting between heavy hole and light hole. The larger LH-HH splitting brings longer relaxation time without changing much the gate time.