Electrically Detected Magnetic Resonance and Near-Zero Magnetoresistance in 4H-SiC pin Diodes

There has been significant interest in the implementation of 4H-SiC in high field and high temperature devices due to its wide bandgap. One such application is in pin diodes primarily used for high-power RF and microwave applications. However, there is currently little known about the chemical nature of defects in 4H-SiC PIN diodes. 

In this study, we provide X-band electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR) analysis of 4H-SiC PIN diodes detected via spin-dependent recombination (SDR) [2].  The EDMR response is described by a nearly isotropic (g = 2.0029 - 2.0035) spectrum which may be due to more than one defect but is likely dominated by the silicon vacancy [1]. Additionally, NZFMR results provide information about the bias-dependent kinetics of the SDR process within the intrinsic region of the diodes. The results may be of particular use for the fields of deep-space and quantum magnetometry.