Electronic structure modification of rare-earth nickelates by hole doping
ORAL
Abstract
RENiO3 is a negative charge transfer energy system which exhibits a temperature-driven metal-insulator transition (MIT), which is also accompanied by a bond disproportionation (BD) transition. The insulating phase is gradually suppressed with hole doping. We have investigated the underlying microscopic changes of the electronic structure parameters by employing several techniques on epitaxial thin films. We have found that the doped holes are localized on Ni around the dopant in the doping range where it is insulating. While, as expected the effective charge transfer energy increases with hole doping, our analysis suggests that it still remains negative and hence a BD is expected [1]. Above a critical concentration, the BD phase cannot be sustained and the sample becomes metallic. This study firmly demonstrates that the insulating state that emerges upon hole doping has polaronic distortions that localize the doped hole, while the BD state still exists.
[1]. B. Mandal et al., arXiv 1701.06819.
[1]. B. Mandal et al., arXiv 1701.06819.
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Presenters
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RANJAN K PATEL
Indian Institute of Science Bangalore
Authors
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RANJAN K PATEL
Indian Institute of Science Bangalore
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Srimanta Middey
Indian Institute of Science Bangalore
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Priya Mahadevan
S N Bose National Center for Basic Scien
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John W Freeland
Argonne National Laboratory
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Philip J Ryan
Argonne National Laboratory
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Siddharth Kumar
Indian Institute of Science,
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Shashank K Ojha
Indian Institute of Science Bangalore
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Jong-Woo Kim
Argonne National Laboratory, Argonne National Lab