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Proximity Induced Superconductivity in Monolayer MoS2

ORAL

Abstract

Molybdenum disulphide (MoS2) has emerged as a prototypical materials among the 2D transition metal dichalcogenides for its stability, low cost and unique electronic, optical and mechanical properties. Its electronic properties can be tuned using different control parameters. This great sensitivity presents an opportunity to functionalize its properties through defect engineering, strain or by proximity to another material. We use high resolution low temperature STM/STS to study the local electronic properties of monolayer MoS2 and the proximity induced superconductivity in monolayer MoS2 placed on top of a Pb this film. We find a superconducting coherence peak amplitude modulated spatially in a Moire pattern on the surface of MoS2 . Our study indicates that the local modulation of induced superconductivity in MoS2 could be controlled via geometrically tuning. This study suggests that heterostructures based on MoS2 offer a viable possibility to tune its electronic properties and open unprecedented possibilities of combining them for technological use.

Publication: Trainer DJ, Wang B, Bobba F, Samuelson N, Xi X, Zasadzinski J, Nieminen J, Bansil A, Iavarone<br>M. Proximity-Induced Superconductivity in Monolayer MoS2 . ACS Nano. 14(3), 2718-2728 (2020)<br>Trainer DJ, Nieminen J, Bobba F, Wang B, Xi X, Bansil A, IavaroneVisualization of Defect Induced In-Gap States in Monolayer MoS2 (Submitted)

Presenters

  • Maria Iavarone

    Temple University

Authors

  • Maria Iavarone

    Temple University

  • Daniel J Trainer

    Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States, Argonne National Laboratory, Temple University

  • Baokai Wang

    Northeastern University

  • Fabrizio Bobba

    Temple University-University of Salerno

  • Jouko Nieminen

    Tampere University

  • Noah Samuelson

    Illinois Institute of Technology

  • Xiaoxing Xi

    Temple University

  • John F Zasadzinski

    Illinois Institute of Technology, Illinois Institute of Technology, Chicago, IL USA

  • Arun Bansil

    Northeastern University, Department of Physics, Northeastern University, USA