Quantum Photonics with the Tin-Vacancy Center in Diamond
ORAL · Invited
Abstract
Quantum networks critically require long-lived, optically interfaced quantum memories coherently coupled with high-quality optical interfaces. Diamond color centers based on group-IV impurities have emerged as strong candidates in recent years because of their promising spin and optical properties and their compatibility with photonic integration. Tin-vacancy (SnV) centers have garnered particular interest for their potential as spin qubits that can operate at temperatures above 1 K. In this talk, we will discuss our recent progress with SnV centers. We will summarize our work, from basic optical characterization of the SnV center [1] to incorporation of SnV centers in photonic devices such as waveguides [2] and photonic crystal cavities to enhance the emission of SnV centers [3]. Our work paves the way for the creation of scalable building blocks of a quantum network operating at liquid helium temperatures.
[1] A. E. Rugar, C. Dory, S. Sun, and J. Vuckovic, Phys. Rev. B 99, 205417 (2019).
[2] A. E. Rugar*, S. Aghaeimeibodi*, C. Dory* et al., ACS Photonics 7, 2356-2361 (2020).
[3] A. E. Rugar*, S. Aghaeimeibodi*, D. Riedel* et al., Phys. Rev. X 11, 031021 (2021).
[1] A. E. Rugar, C. Dory, S. Sun, and J. Vuckovic, Phys. Rev. B 99, 205417 (2019).
[2] A. E. Rugar*, S. Aghaeimeibodi*, C. Dory* et al., ACS Photonics 7, 2356-2361 (2020).
[3] A. E. Rugar*, S. Aghaeimeibodi*, D. Riedel* et al., Phys. Rev. X 11, 031021 (2021).
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Publication: [1] A. E. Rugar, C. Dory, S. Sun, and J. Vuckovic, Phys. Rev. B 99, 205417 (2019).<br>[2] A. E. Rugar*, S. Aghaeimeibodi*, C. Dory* et al., ACS Photonics 7, 2356-2361 (2020).<br>[3] A. E. Rugar*, S. Aghaeimeibodi*, D. Riedel* et al., Phys. Rev. X 11, 031021 (2021).
Presenters
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Alison E Rugar
Stanford Univ
Authors
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Alison E Rugar
Stanford Univ
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Shahriar Aghaeimeibodi
Stanford Univ
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Daniel Riedel
Stanford University, Stanford Univ
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Constantin Dory
Stanford Univ
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Haiyu Lu
Stanford Univ
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Patrick J McQuade
Stanford Univ
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Zhixun Shen
Stanford University, Geballe Laboratory for Advanced Materials, Stanford University, USA, Stanford Univ
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Nicholas A Melosh
Stanford Univ
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Jelena Vuckovic
Stanford University, Stanford Univ