Electric-controlled thermal transistor based on Janus monolayer MoSSe

With the rapid emergence of the high-power-density intelligent terminals, the excellent thermal management in nanostructures, especially for semiconductors, will undoubtedly have significant impact on modern life. However, current thermal management components, especially for the temperature control components, such as thermal diodes, thermal transistors, thermal logic gates, etc., are still suffering from the poor stability, adjustability, time efficiency and difficulty in implementation. Here, we comprehensively investigate the electric-controlled thermal transistor (ECTT) driven by electric field instead of temperature applied in the Janus monolayer MoSSe by employing the first-principles calculations. The result shows that the heat flow amplification coefficient measured by the thermal conductivity is 2.13 times higher than the pristine one under the electric field of 0.040 VÅ^-1. The underlying mechanism revealed by electronic structures shows that the interactions between electrons and phonons are renormalized resulting from the tremendous charge density redistribution caused by the external electric field, and ultimately modulate the phonon anharmonicity. The ECTT component will provide new inspiration for thermal management and information processing in the future.