Large Rashba Spin-Orbit Effect by Orbital Engineering at SrTiO<sub>3</sub>-based Correlated Interfaces
ORAL
Abstract
Large spin-orbit effect is an essential element for efficient spin-orbitronics that utilizes the interplay between charge and spin degree of freedom. This spin-orbit effect is generally small in heavy-metal-based or requires large external applied voltages in complex-oxide-based heterostructures. Here, I will firstly discuss lattice and orbital polarization induced at the SrTiO3-based interfaces. Then, I will present our experimental data to show how Ti-O lattice polarization can be tuned via atomic control of orbital hybridization. This unique approach can present a large Rashba spin-orbit effect at zero applied voltages by interfacial atomic control of orbital hybridization that introduces Ti-O lattice polarization at SrTiO3-based interfaces. The observed spin-orbit effect (∼3.5×10-12eV-m) is four-fold larger than that observed in conventional SrTiO3 interfaces at zero bias voltage. The orbital hybridization and Ti-O polarization are verified through ab-initio electronic structure calculations and high-resolution atomic microscopy. Our results present a unique approach to achieve lattice polarization at SrTiO3 interfaces and open hitherto unexplored avenues of generating and controlling Rashba spin-orbit effect via orbital engineering to design next-generation spin-orbitronics.
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Publication: This work is under submission by Omar G.J., W. Kong, H. Jani, M. S. Li, J. Zhou, Z. S. Lim, S. Prakash, S. W. Zeng, S. Hooda, T. Venkatesan, Y. P. Feng, S. J. Pennycook, L. Shen, A. Ariando. Preprint - https://arxiv.org/abs/2110.06728
Presenters
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Ganesh Ji Omar
Natl Univ of Singapore
Authors
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Ganesh Ji Omar
Natl Univ of Singapore
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Ariando Ariando
Natl Univ of Singapore