Defects in Nitride Materials

Presentations

• First-principles calculations of point defects and impurities in nitride semiconductors

  ORAL · Invited

  March 14, 2022, 4:00 PM – March 14, 2022, 4:36 PM

  Presenters

  • Darshana Wickramaratne

    United States Naval Research Laboratory

  Authors

  • Darshana Wickramaratne

    United States Naval Research Laboratory

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• Modeling of color tunable light-emitting diodes with Eu-doped GaN active layers

  ORAL

  March 14, 2022, 4:36 PM – March 14, 2022, 4:48 PM

  Presenters

  • Hayley J Austin

    Lehigh University

  Authors

  • Hayley J Austin

    Lehigh University

  • Brandon Mitchell

    West Chester University

  • Jun Tatebayashi

    Osaka University

  • Yasufumi Fujiwara

    Osaka University

  • Volkmar G Dierolf

    Lehigh Univ

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• Deterministic creation of optically active defects in AlN towards integrated single photon emitters

  ORAL

  March 14, 2022, 4:48 PM – March 14, 2022, 5:00 PM

  Presenters

  • Heejun Byeon

    Sandia National Laboratories, Michigan State University

  Authors

  • Heejun Byeon

    Sandia National Laboratories, Michigan State University

  • Michael D Titze

    Sandia National Laboratories

  • Jacob D Henshaw

    Sandia National Laboratories

  • Deanna M Campbell

    Sandia National Laboratories

  • Peter A Schultz

    Sandia National Laboratories

  • George T Wang

    Sandia National Laboratories

  • Edward Bielejec

    Sandia National Laboratories

  • Michael P Lilly

    Sandia National Laboratories

  • Andrew M Mounce

    Sandia National Laboratories, Sandia National Laboratory

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• Optical Amplification from Er Optical Center in GaN in the Visible region

  ORAL

  March 14, 2022, 5:00 PM – March 14, 2022, 5:12 PM

  Presenters

  • Jiarong R Cui

    Virginia Tech

  Authors

  • Jiarong R Cui

    Virginia Tech

  • Ho X Vinh

    Virginia Tech

  • Ngoc L.H. Hoang

    Department of Physics and Center for Soft Matter and Biological Physics, Virginia Tech, Blacksburg, Virginia 24061, United States, Virginia Tech

  • Aidan Lentz

    Virginia Tech

  • Nusrat Jahan

    Virginia Tech

  • Vinh Q Nguyen

    Department of Physics and Center for Soft Matter and Biological Physics, Virginia Tech, Blacksburg, Virginia 24061, United States, Virginia Tech

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• Understanding radiative emissions in the vicinity of selected-area regrown GaN diodes

  ORAL

  March 14, 2022, 5:12 PM – March 14, 2022, 5:24 PM

  Publication: In preparation

  Presenters

  • Sam Frisone

    University of Michigan

  Authors

  • Sam Frisone

    University of Michigan

  • Alexander Chang

    Northwestern University

  • Sizhen Wang

    Yale University

  • Bingjun Li

    Yale University

  • Rachel S Goldman

    University of Michigan

  • Lincoln J Lauhon

    Northwestern University

  • Jung Han

    Yale University

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• Temperature Dependence of Spectral Emission from GaN Defect Quantum Emitters

  ORAL

  March 14, 2022, 5:24 PM – March 14, 2022, 5:36 PM

  Presenters

  • Yifei Geng

    Cornell University

  Authors

  • Yifei Geng

    Cornell University

  • Jialun Luo

    Cornell University

  • Len H van Deurzen

    Cornell University

  • Debdeep Jena

    Cornell University

  • Gregory D Fuchs

    School of Applied and Engineering Physics, Cornell University, Cornell University

  • Farhan Rana

    Cornell University

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• Understanding the zincblende to wurtzite polytype transition during epitaxy of gallium nitride nanowires

  ORAL

  March 14, 2022, 5:36 PM – March 14, 2022, 5:48 PM

  Publication: Appl. Phys. Lett. 119, 031601 (2021)

  Presenters

  • Abby Liu

    University of Michigan

  Authors

  • Abby Liu

    University of Michigan

  • Hongling Lu

    University of Michigan

  • Rachel S Goldman

    University of Michigan

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• A first principles study of n-doping of cubic boron nitride with carbon

  ORAL

  March 14, 2022, 5:48 PM – March 14, 2022, 6:00 PM

  Presenters

  • Cyrille Armel Sayou Ngomsi

    Howard University

  Authors

  • Cyrille Armel Sayou Ngomsi

    Howard University

  • Pratibha Dev

    Howard University

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• The Effect of Lattice Relaxation on Nitrogen Incorporation in GaAsN(Bi) Alloys

  ORAL

  March 14, 2022, 6:00 PM – March 14, 2022, 6:12 PM

  Publication: 1. M. Reason, H. McKay, W. Ye, S. Hanson, V. Rotberg, R.S. Goldman, Appl. Phys. Lett. 85, 1692 (2004).<br>2. T. Jen, G. Vardar, Y.Q. Wang, R.S. Goldman, Appl. Phys. Lett. 107, 221904 (2015).

  Presenters

  • Albert Tsui

    University of Michigan

  Authors

  • Albert Tsui

    University of Michigan

  • Timothy Jen

    University of Michigan, Intel Corp.

  • Rachel S Goldman

    University of Michigan

  • Liang Qi

    University of Michigan

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• Inversion Domain Boundaries in Wurzite GaN

  ORAL

  March 14, 2022, 6:12 PM – March 14, 2022, 6:24 PM

  Publication: 10.1103/PhysRevB.103.165305

  Presenters

  • Mohamed Mauroof F Umar

    Pennsylvania State University

  Authors

  • Mohamed Mauroof F Umar

    Pennsylvania State University

  • Jorge O Sofo

    Pennsylvania State University

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• Recovery mechanism of reverse leakage current in GaN HEMTs following thermal storage test

  ORAL

  March 14, 2022, 6:24 PM – March 14, 2022, 6:36 PM

  Publication: Mukherjee, Jayjit, Rupesh K. Chaubey, D. S. Rawal, and R. S. Dhaka. "Analysis of the post-stress recovery of reverse leakage current in GaN HEMTs." Materials Science in Semiconductor Processing 137 (2022): 106222.

  Presenters

  • Jayjit Mukherjee

    Indian Institute of Technology, Delhi

  Authors

  • Jayjit Mukherjee

    Indian Institute of Technology, Delhi

  • Rupesh K Chaubey

    Solid State Physics Laboratory, DRDO

  • Dipendra S Rawal

    Solid State Physics Laboratory, DRDO

  • Rajendra S Dhaka

    Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India, Indian Institute of Technology, Delhi

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