APS Logo

Semiconductor Qubits II

FOCUS · D39 · ID: 47108

Presentations

  • Electron g-factor renormalization in SiGe superlattice quantum wells

    ORAL

    –

    Presenters

    • Benjamin D Woods

      University of Wisconsin-Madison, University of Wisconsin - Madison

    Authors

    • Benjamin D Woods

      University of Wisconsin-Madison, University of Wisconsin - Madison

    • Emily S Joseph

      University of Wisconsin - Madison

    • Thomas W McJunkin

      University of Wisconsin - Madison

    • Yi Feng

      University of Wisconsin-Madison, University of Wisconsin - Madison

    • Donald E Savage

      University of Wisconsin - Madison, University of Wisconsin-Madison

    • Max G Lagally

      University of Wisconsin - Madison

    • Susan N Coppersmith

      University of New South Wales

    • Mark Eriksson

      University of Wisconsin - Madison

    • Mark G Friesen

      University of Wisconsin - Madison

    • Robert J Joynt

      University of Wisconsin - Madison

    View abstract →

  • Anomalous g-factor in a Si/SiGe heterostructure with oscillatory Ge concentration

    ORAL

    –

    Presenters

    • Emily S Joseph

      University of Wisconsin - Madison

    Authors

    • Emily S Joseph

      University of Wisconsin - Madison

    • Thomas W McJunkin

      University of Wisconsin - Madison

    • Benjamin D Woods

      University of Wisconsin-Madison, University of Wisconsin - Madison

    • Benjamin Harpt

      University of Wisconsin - Madison

    • Yi Feng

      University of Wisconsin-Madison, University of Wisconsin - Madison

    • Donald E Savage

      University of Wisconsin - Madison, University of Wisconsin-Madison

    • Max G Lagally

      University of Wisconsin - Madison

    • Sue N Coppersmith

      University of New South Wales

    • Mark G Friesen

      University of Wisconsin - Madison

    • Robert J Joynt

      University of Wisconsin - Madison

    • Mark A Eriksson

      University of Wisconsin - Madison

    View abstract →

  • Increasing the valley splitting in Si/SiGe heterostructures by exploiting atomic concentration fluctuations

    ORAL

    –

    Publication: ​​​​​​​Manuscript in progress. Brian Paquelet Wuetz, Merritt P. Losert, Sebastian Koelling, Lucas E.A. Stehouwer, Anne-Marije J. Zwerver, Stephan G.J. Philips, Mateusz T. Mądzik, Xiao Xue, Guoji Zheng, Mario Lodari, Sergey Amitonov, Nodar Samkharadze, Amir Sammak, Lieven M.K. Vanderspyen, Rajib Rahman, Susan N. Coppersmith, Oussama Moutanabbir, Mark Friesen, and Giordano Scappucci. "Role of atomic fluctuations in lifting energy degeneracy at a Si/SiGe interface."

    Presenters

    • Merritt P Losert

      University of Wisconsin-Madison

    Authors

    • Merritt P Losert

      University of Wisconsin-Madison

    • Brian Paquelet Wuetz

      Delft University of Technology, QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, The Netherlands, QuTech and Kavli Institute of Nanoscience, Delft University of Technology

    • Sebastian Koelling

      Ecole Polytechnique de Montreal, Department of Engineering Physics, École Polytechnique de Montréal

    • Lucas Stehouwer

      QuTech and Kavli Institute of Nanoscience, Delft University of Technology

    • Anne-Marije J Zwerver

      Delft University of Technology, QuTech and Kavli Institute of Nanoscience, Delft University of Technology

    • Stephan G Philips

      Delft University of Technology, QuTech and Kavli Institute of Nanoscience, Delft University of Technology

    • Mateusz T Madzik

      Delft University of Technology, University of New South Wales, QuTech and Kavli Institute of Nanoscience, Delft University of Technology

    • Xiao Xue

      TU Delft, QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft University of Technology

    • Guoji Zheng

      Intel Corporation, QuTech and Kavli Institute of Nanoscience, Delft University of Technology

    • Mario Lodari

      Delft University of Technology, QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, The Netherlands, QuTech and Kavli Institute of Nanoscience, Delft University of Technology

    • Sergey V Amitonov

      Delft University of Technology, QuTech and Kavli Institute of Nanoscience, Delft University of Technology

    • Nodar Samkharadze

      Delft University of Technology, QuTech and Netherlands Organisation for Applied Scientific Research

    • Amir Sammak

      TNO, Netherlands Organization for Applied Scientific Research (TNO), QuTech and TNO, Stieltjesweg 1, 2628 CK Delft, The Netherlands, QuTech and Netherlands Organisation for Applied Scientific Research

    • Lieven Vandersypen

      Delft University of Technology, QuTech and Kavli Institute of Nanoscience, Delft University of Technology

    • Rajib Rahman

      University of New South Wales, Silicon Quantum Computing Pty Ltd., Level 2, Newton Building, UNSW Sydney, Kensington, NSW 2052, Australia

    • Sue N Coppersmith

      University of New South Wales

    • Oussama Moutanabbir

      Ecole Polytechnique de Montreal, École Polytechnique de Montréal, Department of Engineering Physics, École Polytechnique de Montréal

    • Mark G Friesen

      University of Wisconsin - Madison

    • Giordano Scappucci

      Delft University of Technology, QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, The Netherlands, QuTech and Kavli Institute of Nanoscience, Delft University of Technology

    View abstract →

  • Cryogen-free scanning gate microscope for the characterization of Si/Si<sub>0.7</sub>Ge<sub>0.3</sub> quantum devices at milli-Kelvin temperatures

    ORAL

    –

    Publication: https://arxiv.org/abs/2105.05684

    Presenters

    • Seongwoo Oh

      Princeton University

    Authors

    • Seongwoo Oh

      Princeton University

    • Artem Denisov

      Princeton University

    • Pengcheng Chen

      Princeton University

    • Jason R Petta

      Princeton University, Department of Physics, Princeton University

    View abstract →

  • Scanning-gate-driven photon assisted tunneling in a Si/Si<sub>0.7</sub>Ge<sub>0.3</sub> double quantum dot

    ORAL

    –

    Publication: https://arxiv.org/abs/2105.05684

    Presenters

    • Artem Denisov

      Princeton University

    Authors

    • Artem Denisov

      Princeton University

    • Jason R Petta

      Princeton University, Department of Physics, Princeton University

    • Seongwoo Oh

      Princeton University

    • Pengcheng Chen

      Princeton University

    • Gordian Fuchs

      Princeton University

    View abstract →

  • Simulating electron densities obtained in scanning gate microscopy of Si/SiGe quantum dot devices

    ORAL

    –

    Presenters

    • Gordian Fuchs

      Princeton University

    Authors

    • Gordian Fuchs

      Princeton University

    • Artem Denisov

      Princeton University

    • Chris R Anderson

      University of California, Los Angeles, UCLA

    • Mark F Gyure

      University of California, Los Angeles, UCLA

    • Fabio Ansaloni

      Princeton University, Univ of Copenhagen

    • Jason R Petta

      Princeton University, Department of Physics, Princeton University

    View abstract →

  • <sup>28</sup>Si/SiGe heterostructures with engineered semiconductor/dielectric interface

    ORAL

    –

    Presenters

    • Davide Degli Esposti

      QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, The Netherlands

    Authors

    • Davide Degli Esposti

      QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, The Netherlands

    • Brian Paquelet Wuetz

      Delft University of Technology, QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, The Netherlands, QuTech and Kavli Institute of Nanoscience, Delft University of Technology

    • Viviana Fezzi

      QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, The Netherlands

    • Mario Lodari

      Delft University of Technology, QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, The Netherlands, QuTech and Kavli Institute of Nanoscience, Delft University of Technology

    • Amir Sammak

      TNO, Netherlands Organization for Applied Scientific Research (TNO), QuTech and TNO, Stieltjesweg 1, 2628 CK Delft, The Netherlands, QuTech and Netherlands Organisation for Applied Scientific Research

    • Giordano Scappucci

      Delft University of Technology, QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, The Netherlands, QuTech and Kavli Institute of Nanoscience, Delft University of Technology

    View abstract →

  • Quantitative strain mapping in Si<sub>0.7</sub>Ge<sub>0.3</sub>/Si/ Si<sub>0.7</sub>Ge<sub>0.3</sub> heterostructures for spin qubits

    ORAL

    –

    Publication: C. Corley-Wiciak, C. Richter, M. Montanari, A. Corley-Wiciak, I. Zaitsev, C. Manganelli, M. H. Zoellner, E. Zatterin, T. Schuelli, N. W. Hendrickx, A. Sammak, M. Veldhorst, G. Scappucci, G. Capellini, W. M. Klesse. Quantitative strain mapping in a functional Ge/Si0.2Ge0.8 hole spin qubit. TBP.

    Presenters

    • Cedric Corley-Wiciak

      IHP - Leibniz Institute for Innovations for High Performance

    Authors

    • Cedric Corley-Wiciak

      IHP - Leibniz Institute for Innovations for High Performance

    • Carsten Richter

      IKZ – Leibniz -Institut für Kristallzüchtung

    • Wolfgang M Klesse

      Innovations for High Performance Microelectronics, IHP - Leibniz Institute for Innovations for High Performance Microelectronics

    • Eduardo Zatterin

      ESRF – European Synchrotron Radiation Facility

    • Tobias Schuelli

      ESRF – European Synchrotron Radiation Facility

    • Agnieszka A Corley-Wiciak

      IHP - Leibniz Institute for Innovations for High Performance Microelectronics

    • Ignatii Zaitsev

      IHP - Leibniz Institute for Innovations for High Performance Microelectronics

    • Costanza L Manganelli

      IHP - Leibniz Institute for Innovations for High Performance Microelectronics

    • Giovanni Capellini

      Dipartimento di Scienze, Universita Roma Tre; IHP - Leibniz Institute for Innovations for High Performance Microelectronics

    • Michele Virgilio

      Università di Pisa

    • Wolfram Langheinrich

      Infineon Technologies Dresden GmbH&Co.KG,

    • Ketan Anand

      IHP - Leibniz Institute for Innovations for High Performance Microelectronics

    • Yuji Yamamoto

      IHP - Leibniz Institute for Innovations for High Performance Microelectronics

    • Marvin H Zoellner

      IHP - Leibniz Institute for Innovations for High Performance Microelectronics

    • Malte Neul

      RWTH Aachen University,

    • Lars R Schreiber

      JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, RWTH Aachen, RWTH Aachen University,

    • Inga Seidler

      JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, RWTH Aachen University

    • Ran Xue

      JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, RWTH Aachen University

    • Yujia Liu

      IKZ - Leibniz - Institut für Kristallzüchtung

    View abstract →

  • Observation of disorder-induced decoherence for individual electron spins in moving quantum dots

    ORAL

    –

    Presenters

    • Baptiste Jadot

      Univ. Grenoble Alpes, CEA, Leti, Grenoble, France

    Authors

    • Baptiste Jadot

      Univ. Grenoble Alpes, CEA, Leti, Grenoble, France

    • Martin Nurizzo

      Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France, Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France

    • Pierre-André Mortemousque

      Univ. Grenoble Alpes, CEA, Leti, Grenoble, France, Univ. Grenoble Alpes, CEA, Leti, CEA, LETI, Grenoble, France, Univ. Grenoble Alpes, CEA, Leti, Grenoble

    • Emmanuel Chanrion

      Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France, Univ. Grenoble Alpes, CNRS, Institut Néel, Institut Néel, Grenoble, France, Univ. Grenoble Alpes, CNRS, Institut Néel, Grenoble, Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France

    • David J Niegemann

      Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France, Univ. Grenoble Alpes, CNRS, Institut Néel, Institut Neel, Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France

    • Vivien Thiney

      Univ. Grenoble Alpes, CEA, Leti, Grenoble, France, Univ. Grenoble Alpes, CEA, Leti, Univ. Grenoble Alpes, CEA, Leti, Grenoble, Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France, Institut Néel CNRS

    • Arne Ludwig

      Lehrstuhl fur Angewandte Festkorperphysik, Ruhr-Universitat Bochum, Universitatsstrasse 150, D-44780 Bochum, Germany, Ruhr-University Bochum, Lehrstuhl fül Angewandte Festkörperphysik, Rhur-Universität Bochum, Bochum, Germany

    • Andreas D Wieck

      Lehrstuhl fur Angewandte Festkorperphysik, Ruhr-Universitat Bochum, Universitatsstrasse 150, D-44780 Bochum, Germany, Ruhr-University Bochum, Lehrstuhl fül Angewandte Festkörperphysik, Rhur-Universität Bochum, Bochum, Germany

    • Christopher Bäuerle

      Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France, Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 25 rue des Martyrs, 38000 Grenoble, France, Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France

    • Matias Urdampilleta

      Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France, Institute Neel, Univ. Grenoble Alpes, CNRS, Institut Néel, Institut Néel, Grenoble, France, Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France

    • Tristan Meunier

      Institute Neel, Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France, Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France

    View abstract →