Probing microwave characteristics of InAs gatemon qubits with h-BN gate dielectrics

Qubits on solid state devices could potentially provide the rapid control needed for scalable quantum information processors. Materials innovation and design breakthroughs constantly push the boundaries of qubit coherence and functionality of qubits over the past two decades. Semiconductor-superconductor devices offer a low-power tunable element which can be integrated into solid-state superconducting qubit architectures. However, losses attributed to the gate dielectric and underlying substrate must be limited in order to use these materials systems in state-of-the-art qubit circuits. Here we show that one can reliably fabricate voltage tunable qubits on Al-InAs materials system. We benchmark the performance of gatemon qubits (coherence, anharmonicity and coupling strengths) with an h-BN gate dielectric and compare them to qubits with conventional evaporated dielectrics.