Ferroelectric field effect in ultrathin Sr<sub>2</sub>IrO<sub>4</sub> films
ORAL
Abstract
Sr2IrO4 (SIO) is a Jeff = 1/2 Mott insulator with large spin-orbit coupling and strong correlation effect. The correlated behavior depends sensitively on the charge density. In this study, we investigate the effect of ferroelectric field effect doping in ultrathin SIO films. We deposit epitaxial PbZr0.2Ti0.8O3 (PZT)/SIO heterostructures on LaAlO3 (001) substrates via off-axis RF magnetron sputtering, with atomically smooth surface and high crystallinity achieved. By switching the polarization of PZT, we demonstrate nonvolatile resistance switching in 2-3 nm SIO channels. The field effect modulation increases with decreasing channel thickness and temperature. In PZT/2.6 nm SIO, the resistance switching ratio between the polarization up and down states of PZT is ~5% at room temperature, which increases to ~10% at 10 K. We compare the results with the field effect obtained on SrIrO3 channels with similar thickness and discuss the critical material parameters that control the magnitude of the modulation.
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Presenters
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YUANYUAN ZHANG
Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln
Authors
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YUANYUAN ZHANG
Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln
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Le Zhang
Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln
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Xia Hong
Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska - Lincoln, University of Nebraska-Lincoln, University of Nebraska, Lincoln