All-silicon double quantum dot architecture for spin qubit
ORAL
Abstract
Silicon spin qubits, with their long coherence time [1] and compatibility with industrial CMOS technology [2-4], hold great promise for large-scale quantum computing. Nevertheless, improvements in device reproducibility and fabrication are still needed to build a scalable spin qubit architecture.
Leveraging CMOS industry's fabrication expertise, we present here a silicon double quantum dot architecture for a spin qubit fully fabricated in a 300 mm integrated process at the IMEC manufacturing facility.
On these devices, using an integrated SET as a charge sensor, we demonstrate reproducible single and double quantum dots operation with tunable inter-dot coupling.
These results pave the way for the use of silicon spin qubits for large-scale quantum computing.
Leveraging CMOS industry's fabrication expertise, we present here a silicon double quantum dot architecture for a spin qubit fully fabricated in a 300 mm integrated process at the IMEC manufacturing facility.
On these devices, using an integrated SET as a charge sensor, we demonstrate reproducible single and double quantum dots operation with tunable inter-dot coupling.
These results pave the way for the use of silicon spin qubits for large-scale quantum computing.
- [1] Muhonen, J. T et al., Nat. Nanotechnol. 9, 986–991 (2014).
[2] R. Maurand et al., Nat. Commun. 7, 13575 (2016).[EDF1]
[3] M. Veldhorst et al., Nat. Commun. 8, 1766 (2017).
[4] Dumoulin Stuyck, N. I. et al., IEEE Symp. VLSI Circuits, Dig. Tech. Pap. 2021-June, (2021).
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Presenters
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Claude Rohrbacher
Universite de Sherbrooke
Authors
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Claude Rohrbacher
Universite de Sherbrooke
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Clement Godfrin
imec, IMEC
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Stefan Kubicek
imec, IMEC
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Bogdan Govoreanu
imec, IMEC, Imec
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Iuliana P Radu
Imec, IMEC
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Eva Dupont-Ferrier
Universite de Sherbrooke