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Quantum transport evidence of isolated topological nodal-line fermions

ORAL

Abstract

Topological nodal-line semimetals have been shown interesting anomalous transport responses, dictated by the nontrivial band topology, with rich topological structures. However, their transport signatures have often been masked by the complexity in band crossings or the coexisting topologically trivial states. Here we show that, in slightly hole-doped SrAs3, the single-loop nodal-line states are well-isolated from the trivial states and entirely determine the transport responses. Shubnikov-de Hass oscillations in SrAs3 confirm dominant charge conduction by nodal-line fermions and identify its tubular Fermi surface, thinnest among those of known nodal-line semimetals, and the characteristic smoke-ring-type pseudospin texture. These unique characters of nodal-line fermions lead to the significantly enhanced quantum interference effect, resulting in the largest weak antilocalization contribution to electric conduction among topological semimetals, making the isolated nodal-line fermions in SrAs3 desirable for novel devices based on their topological charge and spin transport.

Publication: Hoil Kim, Jong Mok Ok, Seyeong Cha, Bo Gyu Jang, Chang Il Kwon, Yoshimitsu Kohama, Koichi Kindo, Won Joon Cho, Eun Sang Choi, Youn Jung Jo, Woun Kang, Ji Hoon Shim, Keun Su Kim, and Jun Sung Kim. Quantum transport evidence of isolated topological nodal-line fermions. Nature Communications, under review.

Presenters

  • Hoil Kim

    Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea

Authors

  • Hoil Kim

    Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea

  • Jong Mok Ok

    Oak Ridge National Lab, Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea

  • Seyeong Cha

    Department of Physics, Yonsei University, Seoul 03722, Korea

  • Bo Gyu Jang

    Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea

  • Chang Il Kwon

    Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea

  • Yoshimitsu Kohama

    Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan

  • Koichi Kindo

    Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan

  • Won Joon Cho

    Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi-do 446-712, Korea

  • Eun Sang Choi

    National High Magnetic Field Laboratory, National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, USA, National High Magnetic Field Laboratory and Department of Physics, Florida State University

  • Youn Jung Jo

    Kyungpook National University, Department of Physics, Kyungpook National University, Daegu, Korea

  • Woun Kang

    Department of Physics, Ewha Womans University, Seoul 03760, Republic of Korea

  • Ji Hoon Shim

    Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea, POSTECH

  • Keun Su Kim

    Department of Physics, Yonsei University, Seoul 03722, Korea, Yonsei University

  • Jun Sung Kim

    Pohang University of Science and Technology, Pohang Univ of Sci & Tech, Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea, Department of Physics, Pohang University of Science and Technology, Pohang, Korea