Ultra-Confined Lateral Heterostructures in 2D Semiconductors

Spatial confinement drives most quantum effects in semiconductors. In two-dimensional (2D) materials, the gifted confinement along the out-of-plane direction enables a plethora of quantum effects and unprecedented properties. Extra degrees of confinement within the plane of 2D materials requires the development of advanced material synthesis methods combined with state-of-the-art nanofabrication techniques. Towards this goal, the formation of lateral junctions between heterogeneous 2D materials has been intensely pursed. However, the degree of spatial confinements offered by available techniques is far from dimensions at which quantum effects start to emerge. Here, we present a technique that enables the synthesis of lateral heterostructures with dimensions as small as a few tens of nanometers, in isolated or periodic fashions, in predefined locations, and with tunable material compositions. The prospect of the developed method for the realization of quantum devices based on 2D lateral heterostructures will be discussed.