Effects of Strain on Single Electron Devices

Gate-defined quantum dots have various potential applications including their use in quantum information science and metrology. The requirement that these devices be operated at extremely low temperatures coupled with the difference in thermal expansion between the metallic gates and the semiconductor crystal results in a complicated strain profile during operation. To better understand the effects of this strain profile, we perform finite-element simulations of the gate-induced strain and how it impacts the electron states in these devices. In agreement with previous studies, our results suggest that strain can lead to changes in quantum dot location as well as the formation of unintentional quantum dots. Building on these results, we incorporate the electrostatics from the gates into our simulations providing a more complete picture of these devices. Ultimately, we aim to accurately predict quantum dot location as well as the energy associated with any strain-induced unintentional charge traps.