Molecular Beam Epitaxial Growth and Characterization of GaInSb/GaSb (111) Quantum Wells

Inverted semiconductor InAs/GaSb QWs system represents an archetypical two-dimensional topological insulator, and the strained-layer InAs/GaInSb (001) QWs have been shown to exhibit a large bulk gap comparable to room temperature. There is a current interest to explore the MBE growth of this materials system on other low index planes. The (111) QWs have been given particular attention due to strain-induced piezoelectric effect, which in term may affect the topological properties. As a first step towards the growth of high-quality strained-layer InAs/GaInSb(111) 2D TIs, we have successfully grown the strained-layer GaInSb/GaSb QW on GaAs(111)B substrate.We will present growth optimization and low temperature transport data with a brief discussion