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Low-Energy Photoluminescence Induced by Substitutional Nitrogen in Single-Layer Tungsten Disulfide

ORAL

Abstract

Defect engineering is an important technique to tailor the electronic and optical properties of two-dimensional materials. By creating defects using remote N2 plasma exposure, distinct low-energy photoluminescence (PL) peak at 1.59 eV is introduced in single-layer WS2. The N2 plasma exposure dose has a critical influence over this PL peak intensity, making it strongest at about 2.0% sulfur deficiencies and vanish at 5.6% or higher sulfur deficiencies. First-principles calculations suggest that this PL peak is caused by the sulfur substitutions by nitrogen. The substitutional nitrogen defect can serve as an isolated artificial atom for single-photon emitters and can be used to monitor the nitrogen p-type doping concentrations.

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Presenters

  • Qingkai Qian

    Key Laboratory of Optoelectronic Technology and System of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China

Authors

  • Qingkai Qian

    Key Laboratory of Optoelectronic Technology and System of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China

  • Lintao Peng

    Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States

  • Yuanxi Wang

    Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States

  • Anne Marie Z. Tan

    Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, United States

  • Liangbo Liang

    Oak Ridge National Lab, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

  • Tanushree H. Choudhury

    2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

  • Joan M. Redwing

    2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

  • Alexander A. A Puretzky

    Oak Ridge National Laboratory, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

  • David B. Geohegan

    Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

  • Richard G. G Hennig

    University of Florida, Department of Materials Science and Engineering, University of Florida, Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, United States

  • Xuedan Ma

    Argonne National Laboratory, Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States

  • Shengxi Huang

    The Pennsylvania State University, Pennsylvania State University, Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States