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Emission from localized states in few-layer InSe (Part1: Theory)

ORAL

Abstract

The localized hole that binds to the acceptor (defect) in indium selenide (InSe) thin film has an important implication for the material’s optical properties since this localized hole in the valance band can recombine with the electron in the conduction band. To investigate this localized state, we build a mesoscopic model based on the GW computed quasiparticle energy. With this model, we find that the scattering processes between different quantized modes due to quantum confinement play a crucial role in forming the hole-acceptor bound pair. As a result, the charge density of the hole bound state is highly inhomogeneous and strongly depends on the acceptor position in the out-of-plane direction. This leads to interesting electric-field dependence of the bound state energy due to the inversion symmetry breaking.

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Presenters

  • Kok Wee Song

    National Graphene Institute, University of Manchester, National Graphene Institute

Authors

  • Kok Wee Song

    National Graphene Institute, University of Manchester, National Graphene Institute

  • Samuel Magorrian

    National Graphene Institute, University of Manchester, National Graphene Institute

  • Vladimir Falko

    National Graphene Institute, Henry Royce Institute for Advanced Materials, Department of Physics and Astronomy, University of Manchester, National Graphene Institute, Univ of Manchester, School of Physics and Astronomy, University of Manchester, Manchester University, Department of Physics and Astronomy, University of Manchester, National Graphene Institute, University of Manchester, University of Manchester, Physics and Astronomy, National Graphene Institute, the University of Manchester, UK