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Dielectric Loss in Titanium Nitride and Aluminum Superconducting Resonators

ORAL

Abstract

Uniquely characterizing loss from two-level systems (TLS) in dielectric materials in coplanar waveguide resonators is challenging due to the nearly proportional scaling of the electric field participation in response to changes in geometry and anisotropic trench depth. With isotropic trenching, however, we can design a set of device geometries where each geometry amplifies the participation of a specific dielectric region. We fabricate this set of devices for both titanium nitride (TiN) and aluminum (Al) resonators and characterize the specific loss tangent of each dielectric for both materials [1]. In this talk, we show that the metal-air interface is the dominant loss in Al devices, whereas each dielectric region contributes significantly in TiN. Lastly, a post-process hydrofluoric (HF) etch reduces losses from the substrate-air interface in TiN devices [2].
[1] Woods, Phys. Rev. Appl. 12, 014012 (2019)
[2] Melville, Appl. Phys. Lett. 117, 124004 (2020)

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Presenters

  • Alexander Melville

    MIT Lincoln Lab, MIT Lincoln Laboratory, Lincoln Laboratory, MIT, MIT - Lincoln Laboratory

Authors

  • Alexander Melville

    MIT Lincoln Lab, MIT Lincoln Laboratory, Lincoln Laboratory, MIT, MIT - Lincoln Laboratory

  • Wayne Woods

    MIT Lincoln Lab, MIT Lincoln Laboratory, Lincoln Laboratory, MIT, MIT - Lincoln Laboratory

  • Greg Calusine

    MIT Lincoln Laboratory, MIT Lincoln Lab

  • Kyle Serniak

    MIT Lincoln Lab, MIT Lincoln Laboratory, MIT-Lincoln Lab, Lincoln Laboratory, MIT, MIT - Lincoln Laboratory

  • Evan Golden

    MIT Lincoln Laboratory, Lincoln Laboratory, MIT, MIT - Lincoln Laboratory

  • Bethany Niedzielski

    MIT Lincoln Laboratory, MIT Lincoln Lab, Lincoln Laboratory, MIT, MIT - Lincoln Laboratory, Massachusetts Institute of Technology MIT

  • David K Kim

    MIT Lincoln Lab, MIT Lincoln Laboratory, Lincoln Laboratory, MIT, MIT - Lincoln Laboratory, Massachusetts Institute of Technology MIT

  • Arjan Sevi

    MIT Lincoln Lab, MIT Lincoln Laboratory

  • Jonilyn Yoder

    MIT Lincoln Laboratory, MIT Lincoln Lab, Research Laboratory of Electronics, Massachusetts Institute of Technology, Lincoln Laboratory, MIT, MIT - Lincoln Laboratory, Massachusetts Institute of Technology MIT

  • William Oliver

    MIT Lincoln Laboratory, Research Laboratory of Electronics, Massachusetts Institute of Technology, Research Laboratory of Electronics, MIT Lincoln Laboratory, Department of Electrical Engineering and Computer Science, MIT Research Laboratory of Electronics, MIT Lincoln Laboratory, MIT Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology MIT, Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Research Laboratory of Electronics, Massachusetts Institute of Technology, MIT Lincoln Laboratory, MIT, MIT, MIT Lincoln Lab, MIT Lincoln Lab, MIT Lincoln Lab, Massachusetts Institute of Technology, Research Laboratory of Electronics, Department of Electrical Engineering and Computer Science, and Department of Physics, Massachusetts Institute of Technology. MIT Lincoln L, Department of Physics, Department of Electrical Engineering & Computer Science, Research Laboratory of Electronics, MIT Lincoln Laboratory, Massachusetts Institute of Technol, Lincoln Laboratory, Research Laboratory of Electronics, and Department of Electrical Engineering & Computer Science, MIT