Control of NV Center Kinetics and Coherence

Single defects in crystals have become promising qubit candidates for quantum network applications due to the combination of long spin coherence times, strong optical coupling to spin states and a solid-state environment for device integration. Critical for harnessing the full potential of defect-based qubits will be controlling their formation and coherence properties. Here I discuss how single defect longitudinal studies can be utilized to directly obtain information on NV formation, disappearance and reorientation mechanisms [1]. The study enables an experimental estimation of the NV reorientation barrier as well as highlights the important role of other defects in NV kinetics, even in “ultra-pure” samples. In the second half of the talk I will focus on the effect of surfaces and implantation damage on the optical properties of NV centers formed by implantation and annealing, including centers integrated in devices [2], and a novel method toward separating the surface and radiation damage contributions to the observed optical spectral diffusion.

[1] Chakravarthi et al. Physical Review Materials 4, 023402 (2020)
[2] Chakravarthi et el. arXiv:2007:12344 (2020)